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Cree, ZF Join Hands to Develop Semiconductors for Electric Drives

Cree and ZF Friedrichshafen have entered into a strategic collaboration to jointly develop silicon carbide semiconductors for power electronics to be used in electric drives.

ZF has received some orders for electric drives utilizing silicon carbide. A first important milestone of the collaboration with Cree is the cooperation in these missions. By 2022, both firms intend to bring an electric driveline created from silicon carbide from ZF onto the market.

“We’re delighted with the increased cooperation with Cree and are convinced that the mix of our powers will further enhance the efficiency and competitiveness of our elements and systems,” says Jörg Grotendorst, Head of ZF’s E-Mobility Division. “The collaboration with a number one global automotive supplier resembling ZF for the use of silicon carbide-based inverters in next-gen electric autos shows that silicon carbide plays an instrumental role in increasing the capabilities of electric automobiles,” says Gregg Lowe, CEO of Cree.

The future use of silicon carbide-based energy semiconductors is predicted to increase the range of electric automobiles. Specifically, the silicon carbide technology, together with the 800-volt onboard energy supply voltage, makes a significant contribution to increasing efficiency further.

Since January 2016, ZF has strengthened its electric mobility actions in the E-Mobility division based in Schweinfurt. In total, over 9,000 employees in various areas around the world work in the ZF E-Mobility Department.

Cree’s Wolfspeed department, on the other hand, offers a range of silicon carbide and gallium nitride (GaN) energy and radio frequency (RF) solutions. More recently, the corporate announced a significant increase in silicon carbide gadget production capability.


Gary Johnson

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