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Researchers Find Technique to Produce Patterned Transition Metal Ditelluride Layers of 2D Devices

Researchers at Ulsan National Institute of Science and Technology (UNIST) in South Korea have recently launched a method to produce skinny and patterned transition steel ditelluride films to be integrated into 2-D metal semiconductors. Their synthesis method, offered in a paper featured in Nature Electronics, could mitigate the challenges related to the high contact resistance of current electronics based on 2-D materials.

Researchers Find Technique to Produce Patterned Transition Metal Ditelluride Layers of 2D Devices

Since the discovery of graphene, a material with extremely desirable properties for the development of electronics, other 2-D layered supplies with comparable characteristics has attracted substantial consideration.

These materials include transition steel chalcogenides, similar to tungsten ditelluride and molybdenum ditelluride (WTe2 and MoTe2).

These transition steel tellurides are a class of transition metal chalcogenides that reveals unique and extraordinary electrical and optical qualities. They’ve proven great promise for the event of several applied sciences, along with quantum computers, transistors, and phase-transition memories.

The new strategy to create transition metal tellurides devised by Prof. Soon-Yong Kwon and his colleagues entails the use of a tellurium-rich eutectic alloy as a fuel supply that triggers nucleation and the expansion of the crystals. Utilizing this methodology, the researchers had been able to develop 4-inch scale 2-D transition steel ditellurides over a brief time frame (roughly 10 minutes), at a comparatively low temperature of 450oC. Remarkably, the method may also be tailored to create wafer-scaled skinny movies with a wide range of completely different structural patterns.

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Gary Johnson

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